Semiconductor interconnect structures

ABSTRACT

Techniques are disclosed that enable improved shorting margin between unlanded conductive interconnect features and neighboring conductive features. In some embodiments, an etch may be applied to an insulator layer having one or more conductive features therein, such that the insulator layer is recessed below the top of the conductive features and the edges of the conductive features are rounded or otherwise softened. A conformal etch stop layer may then be deposited over the conductive features and the insulator material. A second insulator layer may be deposited above the conformal etch stop layer, and an interconnect feature may pass through the second insulator layer and the conformal etch stop layer to connect with the rounded portion of one of the conductive features. In some embodiments, the interconnect feature is an unlanded via and the unlanded portion of the via may or may not penetrate through the conformal barrier layer.

RELATED APPLICATION

The present application is a continuation of U.S. patent applicationSer. No. 13/693,598 filed on Dec. 4, 2012.

BACKGROUND

In the manufacture of integrated circuits, interconnects may be formedon a semiconductor substrate using a copper damascene process. Such aprocess typically begins with a trench and/or via being etched into aninsulator layer and then filled with copper metal to form theinterconnect. It is often desirable to stack multiple layers to form anintegrated circuit, by adding additional layers of insulator andmetal-filled features. In such cases, various interconnect features canbe used to electrically connect one layer to another, as desired for agiven integrated circuit design. However, as device dimensions continueto scale down, the various interconnect features become narrower andcloser together giving rise to a number of non-trivial problems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example stacked conductive interconnect featureshowing an unlanded via.

FIGS. 2A-F illustrate cross-section side views of a series of integratedcircuit structures showing formation of an interconnect feature inaccordance with an embodiment of the present invention.

FIGS. 3A-D illustrate cross-section side views of a series of integratedcircuit structures showing formation of an interconnect feature inaccordance with another embodiment of the present invention.

FIG. 4 shows a specific example embodiment where the underlying metallanding pad is a metal line of a lower layer in a dynamic random accessmemory (DRAM) integrated circuit structure.

FIG. 5A shows a cross-sectional view of an interconnect structure withan unlanded via.

FIG. 5B illustrates a cross-sectional view of an interconnect structurewith an unlanded via configured in accordance with one embodiment of thepresent invention.

FIGS. 6A-B illustrate a simulation comparing electrical field strengthsin a conventional stacked conductive interconnect structure and astacked conductive interconnect structure configured in accordance withone embodiment of the present invention.

FIG. 7 illustrates an example computing system having one or moredevices implemented with conductive structures formed in accordance withan embodiment of the present invention.

As will be appreciated, the figures are not necessarily drawn to scaleor intended to limit the disclosure to the specific configurationsshown. For instance, while some figures generally indicate straightlines, right angles, and smooth surfaces, an actual implementation of astructure may have less than perfect straight lines, right angles, andsome features may have surface topology or otherwise be non-smooth,given real world limitations of the processing equipment and techniquesused. In short, the figures are provided merely to show examplestructures.

DETAILED DESCRIPTION

Techniques are disclosed that enable improved shorting margin betweenunlanded conductive interconnect features (e.g., vias) and neighboringconductive features of an integrated circuit. As will be appreciated inlight of this disclosure, an unlanded interconnect feature is one wherepart of the feature is on its target landing pad and part of the featureis not on the target landing pad. The area adjacent to the intendedtarget landing pad is generally referred to herein as the off-targetlanding pad. The techniques provided are particularly useful, forinstance, when lithography registration errors cause neighboringconductive features to be physically closer than expected, but can alsobe used when such proximity is intentional (such as in integratedcircuits where high packing density is desired). In some embodiments,the techniques can be implemented by exposing an integrated circuitlayer having an inter-layer dielectric (ILD) and one or more metal (orotherwise conductive) lines to a short unmasked etch, recessing the ILDand rounding the edges/corners of the conductive lines above the ILD.The rounding of the conductive lines may be the result of the differentetch rates of the metal/conductive material and ILD material. Aconformal etchstop layer may be deposited over the ILD material androunded conductive lines, and an upper ILD layer may be deposited overthe conformal etchstop layer. An interconnect feature may be patternedand etched into the upper ILD layer, creating an unlanded via that maypartially contact one of the rounded conductive lines. In some suchembodiments, the conformal etchstop can be effectively planarized orotherwise selectively extended with an additional deposition of materialso as to provide a thicker etchstop over off-target landing pad areas.Numerous configurations and variations will be apparent in light of thisdisclosure.

General Overview

As previously explained, it is often desirable to stack multiple layersof an integrated circuit by adding additional layers of insulator andmetal-filled features, using standard deposition lithography techniques.The scaling of such conventional processes to provide smaller featuresizes can be difficult because of, for example, increased significanceof lithography registration errors. For instance, FIG. 1 shows anexample interconnect structure illustrating the problematic shiftingassociated with lithography registration errors. As can be seen, the viaintended to connect the upper metal (e.g., M3) with the lower metal A(e.g., M2) is misaligned and therefore shifted closer to the neighboringlower metal B, thereby leaving a reduced distance D between theconductive features. This reduced spacing can lead to insufficientshorting margin and decreased time-dependent dielectric breakdown(TDDB), or even a complete short-circuit. Note that even when the viadoes not completely short to the neighboring conductor, the distance Dmay be decreased to a point where the separating insulator is notcapable of withstanding the typical fields generated by, for instance, a˜1V power supply. In one specific example, the E-fields present betweenan unlanded via and an adjacent metal line can be in excess of 2 MV/cm.The end result may be yield fallout in the case of shorting, ordecreased reliability when the space D is incapable of supporting theoperating field. As will be appreciated, while specific example via andmetal layers are used herein for illustration purposes, this issue canexist at all lower metal layers (e.g., M1 through M9, etc.) and in amore general sense, in any integrated circuit structure having multiplelayers of conductive features susceptible to insufficient shortingmargin resulting from lithography registration errors or high packingdensity.

Thus, and in accordance with one embodiment, techniques are provided forforming conductive interconnect features, such as through-vias anddamascene features (e.g., trench/via structures) for electricallyconnecting one layer of an integrated circuit to another layer of thatintegrated circuit. According to one embodiment, a number of metal linesmay be embedded within an ILD base layer. In one specific example, themetal lines are made of copper, although other suitably conductivematerials can be used. This metal layer may be exposed to an unmaskedetch which can recess the ILD layer below the top of the metal lines andeffectively round the edges/corners of the exposed metal lines. Thisrounding may manifest in a number of ways. For instance, in some suchcases, the central portion of the exposed metal line is effectivelyhigher than the edges/corners of the exposed metal lines (e.g., like anupside-down U, or like ∩). In other such cases, the distance between thecorners/edges of the top surface of the exposed metal line iseffectively shorter post-etch, as compared to the pre-etch distancebetween those corners/edges, given the tapering effect that the unmaskedetch causes. In a more general sense, the post-etch distance betweenopposing edges of the exposed metal line are shorter than pre-etchdistances. In some specific cases, for instance, the etch selectivitywith respect to the ILD and metal layers is greater than 10:1, such thatthe metal layer etches more than 10 times slower than the base ILDmaterial for a given etch process. As will be appreciated, however, notethat etch selectivity will vary from one embodiment to the nextdepending on factors such as insulator and/or conductive materialschosen as well as layer thicknesses and etch chemistries and desiredshorting margin, and the disclosure is not intended to be limited to anyparticular etch rate scheme. Rather, any etch rate scheme that enables arounding or edge softening of the metal lines, as described herein, canbe used (e.g., such as those where the etch selectivity with respect tothe ILD and metal is greater than 1:1, or greater than 2:1, etc.). Aconformal etchstop layer may then be deposited over the metal line andthe ILD layer. In one embodiment, the ILD is implemented with a low-kmaterial, and the etchstop layer has a higher dielectric constant thanthe low-k ILD and an increased resistance to dielectric breakdown. Asecond ILD layer may then be deposited over the etchstop, and anotheretch may create a trench and via. If the via is partially landed, thelanded portion of the via may contact the top of the metal line beforethe unlanded portion penetrates the etchstop above the off-targetlanding pad, due to the vertical offset of the etchstop over theoff-target landing pad compared to the etchstop over the metal line. Inthis specific example, because the unlanded portion of the via does notpenetrate the etchstop above the ILD layer, the E-field between the viaand the adjacent metal line may be reduced across the etchstop.Additionally, eliminating the sharp corners of the adjacent metal linemay reduce the E-field. The E-field may be further reduced because therounded or otherwise softened edges/corners of the metal lines canincrease the distance between the unlanded via and an adjacent metalline. In some embodiments, an additional etchstop material may bedeposited so as to provide a thicker etchstop over off-target landingpad areas. This optional additional etchstop material may be differentthan the conformal etchstop material and can be tuned with respect toetch selectivity only so as to ensure that the landed portion of the viaetch breaches the conformal etchstop to make connection with theunderlying metal line before the unlanded portion of the via etchbreaches the conformal etch stop layer. Numerous suitable etchstopmaterials, ILD materials (sometimes referred to as dielectrics orinsulator materials), metal/alloy materials (sometimes referred to asfill metal, nucleation metal or seed metal), and/or any alternativeintervening material and, as well as numerous suitable fabricationprocesses (e.g., wet/dry etching, lithography, chemical vapordeposition, atomic layer deposition, spin-on deposition, physical vapordeposition, electroplating, electroless deposition, etc.), can be usedto implement an embodiment of the present invention, as will beappreciated in light of this disclosure.

Interconnect Structures with Bilayer Insulator

FIGS. 2A-F illustrate cross-section side views of a series of integratedcircuit structures showing formation of an interconnect featureconfigured in accordance with an embodiment of the present invention.Each of FIGS. 2A-F illustrates a base ILD layer with three metal orotherwise conductive lines, each labeled Metal A-C, formed or otherwiseembedded therein. Each of metal lines A-C may be made of the same ordifferent conductive materials, depending on the specific application.

As can be seen, FIG. 2A illustrates an ILD layer having a number ofmetal lines embedded therein. As will be appreciated in light of thisdisclosure, the structure may be formed as part of, or otherwise on, asubstrate and may be configured in a number of ways and using any numberof materials. Each of the ILD and metal or otherwise conductive line orwires can be deposited using conventional processes, such as chemicalvapor decomposition (CVD), atomic layer deposition (ALD), spin-ondeposition (SOD), physical vapor decomposition (PVD), or other suitabledeposition processes, and then be planarized as commonly done (e.g., byway of chemical mechanical planarization, or CMP). The ILD and metal orotherwise conductive lines/wires can vary greatly in thickness, but insome example embodiments the ILD layer is in the range of 50 nm to 5000nm. The ILD layer may include multiple sub-layers in some embodiments(of the same or different materials), or may be a single layer. In someembodiments, the trench where the metal lines are formed may be linedwith a barrier layer (to prevent electromigration into the ILD) and/or aseed layer (to assist in metallization of the trench), and/or any otherdesired layers.

As shown in FIG. 2B, a relatively short unmasked etch can be applied tothe ILD and metal lines. In one embodiment, the etch rate of the metalis lower than the etch rate of the ILD, such that trenches are formed inthe ILD between the metal lines while only the sharp edges of the metallines are rounded or softened by the etch process. In one specificembodiment, the metal lines may be copper. In such an embodiment,because copper does not have volatile fluorides, the unmasked etch maybe performed using any suitable fluorinated etch. Although only threemetal lines are shown in this example, any number of metalized trenchesmay be present. Any suitable lithography patterning and etch processescan be used to etch the ILD and metal (e.g., wet and/or dry, isotropicand/or anisotropic, etc.). Any suitable ILD and fill metal may beimplemented, so long as the metal (or conductive material) has a loweretch rate than the ILD material allowing for the formation of therounded edges/corners on the metal lines rising above the ILD, inaccordance with an embodiment of the present invention.

As shown in FIG. 2C, a conformal etchstop layer may be deposited on theILD and metal lines. The etchstop layer can be deposited using anysuitable deposition technique (e.g., ALD, CVD, PVD, etc.). In someembodiments, the etchstop layer can be CVD SiN or SiNC, PECVD SiN, orSiNC, an ALD dielectric process such as Al₂O₃ or HfO₂, or other suitablematerials (such as those materials typically used for passivation,etchstops, and electromigration barriers). In some example cases, theetchstop layer has a thickness in the range of, for instance, 2 nm and200 nm (e.g., 30 nm to 50 nm). As will be appreciated in light of thisdisclosure, the thickness of the etchstop layer can vary greatly, andthe techniques disclosed are not intended to be limited to anyparticular range of thicknesses. A second ILD layer included in thestacked integrated circuit structure may then be provided, as shown inFIG. 2D using processes and materials as previously described withreference to FIG. 2A. The first and second ILD layers may be the samematerial, but may also be different materials as will be appreciated inlight of this disclosure.

Example ILD insulator materials that can be used include, for example,nitrides, oxides, oxynitrides, oxycarbides, polymers, silanes,siloxanes, or other suitable insulator materials. In some embodiments,the ILD may be implemented with ultra-low-k insulator materials (havinga low dielectric constant relative to SiO₂) and the conformal etchstoplayer may be implemented with a material having a higher dielectricconstant than the ILD materials and a higher resistance to dielectricbreakdown. Ultra-low dielectric materials may generally have greaterporosity and therefore a faster etch rate relative to denser materialshaving higher dielectric constants. Example low-k dielectric materialsinclude silicon dioxide, carbon doped oxide (CDO), organic polymers suchas perfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass(FSG), and organosilicates such as silsesquioxane, siloxane, ororganosilicate glass. Examples of ultra-low-k dielectric materialsgenerally include any such low-k materials, but configured with pores orother voids to further reduce density and dielectric constant. Examplesof high-k dielectric materials include, for instance, hafnium oxide,hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide,zirconium oxide, zirconium silicon oxide, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate. The metal can be any suitable metal orsuitable conductive material (e.g., copper, nickel, silver, gold,platinum, cobalt, tungsten, or alloys thereof such as copper-cobalt,copper-tin, cobalt-phosphorous-tungsten, nickel-phosphorous-tungsten, orany other suitable fill metal).

In some specific embodiments, the ILD material may be, for example, anultra-low dielectric material such as a porous SiCOH having a dielectricconstant k of less than 2.3 and porosity greater than 35 volume %. Insuch example cases, the etchstop layer can be, for instance, arelatively denser SiCOH having a dielectric constant k in the range ofabout 2.8 to 3.0, and a porosity of less than 10 volume % or a plasmaenhanced CVD (PECVD) oxide (e.g., silicon dioxide) or nitride (e.g.,silicon nitride). In such example cases, the fill metal can be copperwith an etch rate lower than the etch rate of the ILD material. In thisspecific example, an etch process with greater than 10:1 selectivity inthe etch of the fill metal and ILD layer is achieved.

An unlanded via may be patterned and etched through the upper ILDmaterial, as shown in FIG. 2E. As can be seen, the via is shifted inthis example toward the neighboring line, metal B, such that a portionof the via is over metal A, while a portion of the via is over theoff-target landing pad. The via can be formed in the ILD bilayer, forexample, using standard lithography including via patterning andsubsequent etch processes followed by polishing, cleans, etc. astypically done. The patterning and etch processes can be carried out,for instance, using wet and/or dry etch techniques. The via dimensionscan vary, depending on the application. In one example case, the viaopening is about 5 nm to 500 nm (e.g., 20 to 45 nm), and has an aspectratio in the range of about 8:1 to 2:1 (e.g., 4:1). In otherembodiments, note that the via may be part of a dual damascene structurethat includes the via and an upper wider trench portion. As will beappreciated, the dimensions and aspect ratio of the desired interconnectstructure will vary from one embodiment to the next, and the techniquesdisclosed are not intended to be limited to any particular range ofdimensions or structural configuration (e.g., single or dual damascene,etc.). In one specific example, due to the vertical offset of theetchstop over the off-target landing pad as compared to the etchstopover metal A, the landed portion of the via etch may contact the top ofmetal A before the unlanded portion of the via etch penetrates throughthe etchstop of the off-target landing pad.

As shown in FIG. 2F, the upper metal line and the substantially verticalunlanded via may be metalized using materials and processes similar tothose discussed with reference to FIG. 2A and may or may not include anadditional support layer (e.g., diffusion barrier, nucleation layer,adhesion layer, and/or other desired layers). As will be furtherappreciated in light of this disclosure, eliminating the sharp cornersof the adjacent metal line reduces the E-field between metal B and theunlanded via, as well as increasing the distance between metal B and theunlanded via. Additionally, because the unlanded portion of the via doesnot penetrate the etchstop above the off-target landing pad in thisparticular embodiment, the E-field between the via and the adjacentmetal B is reduced across the etchstop, in accordance with someembodiments. Thus, the possibility of shorting to the neighboring metalB is reduced. Note that other embodiments may allow the unlanded portionof the via to penetrate the etchstop, but risk of shorting is stillreduced.

FIGS. 3A-D illustrate cross-sectional side views of a series ofintegrated circuit structures showing formation of an interconnectfeature configured in accordance with another embodiment of the presentinvention. Each of FIGS. 3A-D illustrates a base ILD layer with threemetal lines, Metal A-C, formed or otherwise embedded therein. Aspreviously explained, the ILD insulator layer may be formed as part of,or otherwise on, a substrate and may be configured in a number of waysand using any number of materials, as will be appreciated in light ofthis disclosure. Factors such as desired dielectric constant can be usedto select the insulator material, which can be, for instance, any of thepreviously described insulator materials. The ILD and metal lines can beetched and coated with an etchstop layer as shown in FIGS. 2A-C, andprevious relevant discussion with respect to those figures is equallyapplicable here. In this specific example embodiment, the etchstop layermay be further coated so as to effectively extend the etchstop layer inthe areas between the metal lines, so as to provide an optional extendedetchstop layer (OEEL). In some embodiments, this optional layer can beimplemented with, for example, a flowable carbide or flowable nitridelayer. In some such embodiments, the flowable layer can have a lower kvalue than the conformal etchstop material, and various materials may beused based on the desired etch selectivity. An example flowable carbidematerial that may be used is a spin-on carbide commercially availablethrough various suppliers. The flowable material may also be aPECVD-deposited material, e.g., as deposited with the Eterna™ FCVD™process of Applied Materials, Inc.

In the specific example shown in FIG. 3A, the optional extended etchstoplayer may be deposited over the conformal etchstop layer using anysuitable deposition technique (e.g., ALD, CVD, PVD, etc.). In oneparticular example embodiment, a flowable carbide may be deposited onthe wafer such that the top of the carbide layer is about the sameheight as the high points of the underlying conformal etchstop layercovering the various metal lines. The optional extended etchstop layerthickness may vary from one embodiment to the next, and in someembodiments the flowable layer can merely fills the spaces between themetal lines, while in other embodiments it may cover the etchstop abovethe metal lines with a relatively thin layer (e.g., ranging from amonolayer to 10 nm, or otherwise, so long as a desired etch profilebetween the off-target landing pad and the target landing pad can beachieved). In some embodiments, the actual layer thickness may varygreatly from one point to the next along the flowable layer, andachieving a perfectly smooth upper surface as shown in FIG. 3A is notnecessary. In one specific example, a flowable carbide layer effectivelyincreases the thickness of the conformal etchstop layer above theoff-target landing pad, thus improving the ability of the unlandedportion of the via to not penetrate below the conformal etchstop. Thethickness differential that may be achieved with a flowable OEELmaterial allows for greater etch selectivity. As shown in FIG. 3B, afterdeposition of the optional flowable layer, an upper ILD layer may beprovided using processes and materials as previously described withreference to FIG. 2A.

After deposition of the upper ILD layer, an unlanded via may bepatterned and etched, as shown in FIG. 3C. The previous relevantdiscussion with respect to patterning and etching an unlanded via isequally applicable here. In this specific example embodiment, the viaetch penetrates through the upper ILD layer, through the flowablecarbide layer, and through the etchstop layer above metal A. In thisexample, however, a portion of the etchstop layer remains in theoff-target landing pad to the left of metal A. This may be achievedbecause of the thickness differential of the flowable layer, as well asthe vertical offset of the conformal etchstop above metal A as comparedto the conformal etchstop covering the ILD layer.

As shown in FIG. 3D, the upper metal line and the substantially verticalunlanded via may be metalized using materials and processes similar tothose discussed with reference to FIG. 2A and may or may not include anadditional support layer (e.g., diffusion barrier, nucleation layer,adhesion layer, and/or other desired layers). Eliminating or otherwisediminishing the sharp corners of the adjacent metal B can reduce theE-field between metal B and the unlanded via, as well as increase thedistance between metal B and the unlanded via. According to thisspecific embodiment, the rounded edges of the metal lines, the conformaletchstop layer, and the flowable carbide layer all contribute toreducing the possibility of dielectric breakdown between the unlandedvia and the adjacent metal B.

FIG. 4 shows a specific example embodiment where the underlying metallanding pad is a metal line of a lower layer in a dynamic random accessmemory (DRAM) integrated circuit structure. Note, however, any number ofother multi-layer integrated circuits may have a similar stackedstructure. As can be seen, the integrated circuit may include aplurality of stacked interconnect layers on top of the substrate. Inthis example case, the substrate is configured with various DRAM cellcomponents integrated therein, such as access transistor T and word lineWL. Such DRAM devices typically include a plurality of bit cells, witheach cell generally including a storage capacitor communicativelycoupled to a bitline by way of an access transistor that is gated by aword line. Other typical DRAM components and features not shown can alsobe included (e.g., row and column select circuitry, sense circuitry,power select circuitry, etc). Each layer includes various metal lines(M1, M1′, M2, M2′ . . . M9, and M9′) and corresponding vias (V0, V0′,V1, V1′ . . . V8 and V8′) formed within an ILD material. Note that thelayout shown is not intended to implicate any particular feature,spacing, or density. Rather, this layout is simply an arbitrary example,and any number of layout designs can benefit from an embodiment of thepresent invention, where conductive interconnect features are formed asdescribed herein. In this specific embodiment, the etch rate of themetal lines is lower than that of the ILD material for a given etchchemistry, and each ILD layer and metal line has been subjected to anunmasked etch such that the ILD layer is etched lower than the metalline, while the edges of the metal lines are rounded/softened. Inaddition, each metal line and via of this example embodiment may beconfigured with an optional conductive barrier layer (e.g., tantalum orother diffusion barrier). Other embodiments may include fewer or moresuch layers (e.g., nucleation layers, adhesion layers, etc.).

In this particular example case, FIG. 4 shows how via V1 is unlanded andelectrically connects metal line M2 to the underlying metal line M1.Note how this unlanded via can be one of many vias, and can also be theonly one that is unlanded, or one of many unlanded vias. The off-targetlanding may be, for instance, due to registration errors, or may beintentional. In any case, and as will be appreciated in light of thisdisclosure, the differential etch rate of the metal lines as compared tothe ILD material yields a vertical offset between the metal lines andthe ILD material, as well as an adjacent metal line M1′ with rounded ortapered upper edges as opposed to sharp edges. As shown in this example,a conformal etchstop layer may be deposited over the rounded/taperedmetal lines and the ILD material. In this specific example, the verticaloffset of the metal lines as compared to the ILD helps prevent via V1from penetrating through the etchstop layer between metal lines M1 andM1′. The rounded/tapered metal lines may substantially decrease theE-field between via V1 and adjacent line M1′, as well as increase thedistance between the via and adjacent line. Additionally, because via V1has not penetrated the underlying conformal etchstop layer between metallines M1 and M1′ in this example case, the E-field between the via andadjacent line may decrease across the etchstop. Thus, in one embodimentof the present invention, the risk of dielectric breakdown between anunlanded via and an adjacent metal line may be decreased because of thereduced E-fields described above. In one embodiment, a device mayinclude one or more lower levels of metallization that have metal lineswith rounded/tapered edges as described herein, while also having one ormore higher levels of metallization where the metal lines lack suchrounded/tapered edges. For example, the lower layers that include M1/V0and M2/V1 may include rounded metal lines as described herein. In thatsame device, the upper layers that include M8/V7 and M9/V8 may havemetal lines without such intentionally rounded edges/corners.

FIG. 5A shows a cross-sectional view of an interconnect structure withan unlanded via connected to metal A. FIG. 5B illustrates across-sectional view of an unlanded via configured in accordance withone embodiment of the present invention. As can be seen, FIGS. 5A and 5Bare drawn to reflect real world process limitations, in that thefeatures are not drawn with precise right angles and straight lines. Ascan be seen in FIG. 5A, the metal lines A-C have relatively sharp uppercorners. These corners can enhance the E-field between the lines and anyadjacent interconnects or lines. Specifically, the E-field between metalB and the unlanded via may be enhanced by the sharp corner on the upperright edge of metal B. In this particular example, the unlanded viapenetrates through the upper ILD layer, and also through the optionalbarrier layer covering the metal lines A-C and the lower ILD layer,connecting the upper metal line to metal A. Further note in this examplethat the via also penetrates within the lower ILD layer near metal A,decreasing the distance D between the via and adjacent metal B.

As can be seen in FIG. 5B, the upper edges of the metal lines A-C havebeen intentionally rounded or tapered or otherwise softened and thelower ILD layer has been etched below the tops of the metal lines,resulting in a vertical offset between the ILD material and the top ofthe metal lines. Specifically, the softened upper edges of metal Bincrease the distance D between it and the unlanded via, and alsodecrease the E-field between the unlanded via, as compared to theexample shown in FIG. 5A. As can be further seen in this exampleembodiment, a conformal etchstop layer is deposited over the ILDmaterial and metal lines. In such an example, the unlanded via canpenetrate through the upper ILD layer as well as through the etchstoplayer covering metal A, connecting the upper metal line to metal A. Inthis particular embodiment, however, the via does not penetrate throughthe etchstop covering the off-target landing pad. The E-field betweenmetal B and the unlanded via may drop across the etchstop because thevia does not penetrate the etchstop of the off-target landing pad inthis example. The resulting interconnect structure may have asignificantly lower E-field as compared to the example shown in FIG. 5A,thus increasing the structure's resistance to dielectric breakdown.

FIG. 6A illustrates a simulation of the E-field strength in aconventional stacked conductive interconnect structure (such as the oneshown in FIG. 1). FIG. 6B illustrates a simulation of the E-fieldstrength in a stacked conductive interconnect structure configured inaccordance with an embodiment of the present invention (such as the onesshown in FIG. 2F, 3D, 4, or 5B). As can be seen in FIG. 6A, the metalline of the conventional structure has a sharp corner which may create astrong E-field between it and the adjacent unlanded via. The dark areanear the corner of the metal line shows the area with the strongestE-field. As can be seen in FIG. 6B, the sharp corner of the metal linehas been rounded by an etch or other suitable process, according to oneembodiment of the present invention, thus reducing the strongest E-fieldbetween it and the adjacent unlanded via. In one specific embodiment,the E-field between the unlanded via and the adjacent metal line is 15%lower in the ILD and 30% lower overall when the metal line edges arerounded as compared to the conventional stacked conductive interconnectstructure.

Example System

FIG. 7 illustrates a computing system 1000 implemented with one or moreintegrated circuit structures configured and/or otherwise fabricated inaccordance with an example embodiment of the present invention. As canbe seen, the computing system 1000 houses a motherboard 1002. Themotherboard 1002 may include a number of components, including but notlimited to a processor 1004 and at least one communication chip 1006,each of which can be physically and electrically coupled to themotherboard 1002, or otherwise integrated therein. As will beappreciated, the motherboard 1002 may be, for example, any printedcircuit board, whether a main board or a daughterboard mounted on a mainboard or the only board of system 1000, etc. Depending on itsapplications, computing system 1000 may include one or more othercomponents that may or may not be physically and electrically coupled tothe motherboard 1002. These other components may include, but are notlimited to, volatile memory (e.g., DRAM), non-volatile memory (e.g.,ROM), a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth). Any of the components included in computingsystem 1000 may include one or more integrated circuit structuresconfigured with one or more conductive interconnect features havingrounded/tapered metal lines, as variously described herein. Theseintegrated circuit structures can be used, for instance, to implement anon-board processor cache or memory array or other circuit feature thatincludes interconnects. In some embodiments, multiple functions can beintegrated into one or more chips (e.g., for instance, note that thecommunication chip 1006 can be part of or otherwise integrated into theprocessor 1004).

The communication chip 1006 enables wireless communications for thetransfer of data to and from the computing system 1000. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1006 may implementany of a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing system 1000 may include a plurality ofcommunication chips 1006. For instance, a first communication chip 1006may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1006 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 1004 of the computing system 1000 includes an integratedcircuit die packaged within the processor 1004. In some embodiments ofthe present invention, the integrated circuit die of the processorincludes onboard memory circuitry that is implemented with one or moreintegrated circuit structures configured with one or more self-enclosedconductive interconnect features having rounded metal lines, asvariously described herein. The term “processor” may refer to any deviceor portion of a device that processes, for instance, electronic datafrom registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory.

The communication chip 1006 may also include an integrated circuit diepackaged within the communication chip 1006. In accordance with somesuch example embodiments, the integrated circuit die of thecommunication chip includes one or more devices implemented with one ormore integrated circuit structures formed as variously described herein(e.g., on-chip processor or memory having rounded/tapered metal lines).As will be appreciated in light of this disclosure, note thatmulti-standard wireless capability may be integrated directly into theprocessor 1004 (e.g., where functionality of any chips 1006 isintegrated into processor 1004, rather than having separatecommunication chips). Further note that processor 1004 may be a chip sethaving such wireless capability. In short, any number of processors 1004and/or communication chips 1006 can be used. Likewise, any one chip orchip set can have multiple functions integrated therein.

In various implementations, the computing system 1000 may be a laptop, anetbook, a notebook, a smartphone, a tablet, a personal digitalassistant (PDA), an ultra-mobile PC, a mobile phone, a desktop computer,a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the system 1000may be any other electronic device that processes data or employsintegrated circuit features configured with one or more conductiveinterconnect features having rounded or otherwise softened metal lines,as variously described herein.

Numerous embodiments will be apparent, and features described herein canbe combined in any number of configurations. One example embodiment ofthe present invention provides a semiconductor device. The deviceincludes a first insulator structure, a first conductive featurepartially within the first insulator structure with a portion of thefirst conductive feature at least partially protruding beyond a surfaceof the first insulator structure. The device further includes a secondinsulator structure with a second conductive feature therein. The devicefurther includes a conformal intervening layer located between the firstand second insulator structures such that the first insulator structure,the intervening layer, and the second insulator structure are arrangedin a stack. The device further includes a conductive interconnectfeature which connects the first conductive feature with the secondconductive feature by passing through the conformal intervening layerand landing on the first conductive feature. In some cases, theconformal intervening layer conforms to the protruding portion of theconductive feature of the first insulator structure. In one such case,the conductive interconnect feature is an unlanded via. In one suchcase, the unlanded portion of the unlanded via does not penetrate theconformal intervening layer. In some cases, the ratio of the firstinsulator structure etch rate to the first conductive feature etch ratefor a given etch process is greater than 3. In some cases, the conformalintervening layer is a conformal etchstop layer deposited over the firstinsulator structure and the first conductive feature, and the portion ofthe first conductive feature at least partially protruding beyond thesurface of the first insulator structure has rounded corners. In onesuch case, an additional insulator layer is included between theconformal intervening layer and the second insulator structure andadjacent to sides of the protruding portion of the first conductivefeature, wherein the conductive interconnect feature passes through theadditional insulator layer. In one such case, the additional insulatorlayer is either a flowable carbide or flowable nitride deposited overthe conformal intervening layer. In some cases, the additional insulatorlayer includes an etchstop material, effectively increasing thethickness of portions of the conformal etchstop layer. In some cases thefirst and second insulator structures each include an ultra-lowdielectric material having a dielectric constant below that of silicondioxide, and the conformal intervening layer includes a dielectricmaterial having a higher dielectric constant than the ultra-lowdielectric material.

Another embodiment of the present invention provides a multilayerintegrated circuit device. In this example case, the device includes afirst insulator structure having one or more metal features within aninsulator material, the one or more metal features having a portion atleast partially protruding beyond a surface of the first insulatorstructure, the protruding portion having rounded corners. The devicefurther includes a second insulator structure having one or more metalfeatures embedded within an insulator material. The device furtherincludes a conformal etchstop layer between the first and secondinsulator structures, wherein the first insulator structure, etchstoplayer, and second insulator structure are arranged in a stack. Thedevice further includes a conductive interconnect feature connecting oneof the metal features of the first insulator structure to one of themetal features of the second insulator structure, a portion of theconductive feature passing through the conformal etchstop layer andlanding on at least one of the rounded corners of one of the metalfeatures of the first insulator structure. In some cases, the conductiveinterconnect feature is an unlanded via. In one such case, the unlandedportion of the unlanded via does not penetrate the conformal etchstoplayer. In another such case, the rounded corners of the one or moremetal features increase the distance between the unlanded via and anadjacent metal feature, relative to the distance between those two ifthe adjacent metal feature were not partially rounded. In some cases,the device further includes an additional insulator layer between theconformal etchstop layer and the second insulator structure. In one suchcase, the additional insulator layer is a flowable carbide or a flowablenitride material. In another such case, the additional insulator layerincludes an etchstop material which effectively increases the thicknessof the conformal etchstop layer between the one or more metal featuresof the first insulator structure.

Another embodiment of the present invention provides a method of forminga semiconductor device. In this example case, the method includes:providing a first insulator structure with a first metal feature withinan insulator material; etching the first insulator structure so as torecess the insulator material to be lower than the first metal featureand to round corners of the first metal feature; depositing a conformaletchstop layer over the etched insulator material and the rounded firstmetal feature; depositing a second insulator structure having a secondmetal feature embedded within an insulator material; and connecting thefirst metal feature to the second metal feature with a conductiveinterconnect feature. In some cases, the conductive interconnect featureis an unlanded via. In one such case, the unlanded portion of theunlanded via does not penetrate the conformal etchstop layer. In somecases, the method further includes depositing a flowable barrier layerover the conformal etchstop layer before depositing the second insulatorstructure. In one such case, the flowable barrier layer is a flowablecarbide or a flowable nitride material. In some cases, etching the firstinsulator structure includes applying an unmasked etch to the firstinsulator structure, wherein the etch rate of the insulator material isgreater than the etch rate of the first metal feature.

The foregoing description of the embodiments of the invention has beenpresented for the purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed. Many modifications and variations are possible in light ofthis disclosure. It is intended that the scope of the invention belimited not by this detailed description, but rather by the claimsappended hereto.

What is claimed is:
 1. A semiconductor device, comprising a conductiveinterconnect feature connecting a first conductive feature with a secondconductive feature, the conductive interconnect feature passing througha conformal intervening layer and partially landing on the firstconductive feature, wherein the unlanded portion of the conductiveinterconnect feature does not penetrate the conformal intervening layer.2. The device of claim 1 wherein the conformal intervening layerconforms to a protruding portion of the first conductive feature thatextends beyond an insulator layer.
 3. The device of claim 1, wherein thefirst conductive feature is included in a first insulator layer, and thesecond conductive feature is included in a second insulator layer, andthe first insulator layer, conformal intervening layer, and secondinsulator layer are arranged in a stack.
 4. The device of claim 1,wherein a protruding portion of the first conductive feature extendsbeyond an insulator layer, the protruding portion having a roundedcorner with which the conductive interconnect feature connects.
 5. Thedevice of claim 1, wherein the first conductive feature is included in afirst insulator layer, and the ratio of first insulator layer etch rateto the first conductive feature etch rate for a given etch process isgreater than
 3. 6. The device of claim 1, wherein a portion of the firstconductive feature at least partially protrudes from a first insulatorlayer, and the conformal intervening layer is at least partially on andconforms to the protruding portion.
 7. The device of claim 6, furthercomprising an additional insulator layer at least partially on theconformal intervening layer, wherein the conductive interconnect featurefurther passes through the additional insulator layer.
 8. The device ofclaim 7, wherein the additional insulator layer comprises a flowabledielectric material.
 9. The device of claim 8, wherein the flowabledielectric material is one of a flowable carbide or flowable nitride.10. The device of claim 1, wherein the first conductive feature isincluded in a first insulator layer, and the second conductive featureis included in a second insulator layer, and at least one of the firstand second insulator layers comprises an ultra-low dielectric materialhaving a dielectric constant below that of silicon dioxide, and theconformal intervening layer comprises a dielectric material having ahigher dielectric constant than the ultra-low dielectric material.
 11. Amobile computing system comprising the device of claim
 1. 12. Amicroprocessor comprising the device of claim
 1. 13. A memory circuitcomprising the device of claim
 1. 14. A semiconductor structure,comprising: a first insulator layer having a first conductive feature; asecond insulator layer having a second conductive feature protrudingtherefrom; a conformal dielectric layer at least partially on andconforming to the protruding portion of the second conductive feature;and a conductive interconnect feature connecting the first conductivefeature with the second conductive feature, the conductive interconnectfeature passing through the conformal dielectric layer and partiallylanding on the second conductive feature so as to provide an unlandedportion of the conductive interconnect feature, wherein the unlandedportion of the conductive interconnect feature does not penetrate theconformal intervening layer.
 15. The structure of claim 14, wherein thefirst insulator layer, conformal dielectric layer, and second insulatorlayer are arranged in a stack.
 16. The structure of claim 14, whereinthe protruding portion of the second conductive feature has a roundedcorner with which the conductive interconnect feature connects.
 17. Thestructure of claim 14, wherein the ratio of first insulator layer etchrate to the first conductive feature etch rate for a given etch processis greater than
 3. 18. A semiconductor structure, comprising: aconductive interconnect feature connecting a first conductive featurewith a second conductive feature, the conductive interconnect featurepassing through a conformal dielectric layer and partially landing onthe first conductive feature so as to provide an unlanded portion of theconductive interconnect feature, wherein the unlanded portion of theconductive interconnect feature does not penetrate the conformalintervening layer; and an insulator layer at least partially on theconformal dielectric layer, wherein the conductive interconnect featurefurther passes through the insulator layer.
 19. The structure of claim18, wherein the additional insulator layer comprises a flowabledielectric material.
 20. The structure of claim 19, wherein the flowabledielectric material is one of a flowable carbide or flowable nitride.